Valentin Flauraud, EPFL LMIS1, Lausanne
Besides the obvious time advantage of direct patterning, the very high resolution alignment offered by the MLA is a clear advantage over our traditional lithography line. With alignment accuracy repeatably in the few hundred nanometres, high resolution multiple patterning and seamless mix and match with our electron beam lithography tool is now possible.
Andreas Fleischmann, Kirchhoff Institute of Physics, Heidelberg
The MLA 150 provides our Institute with a compact solution for the most demanding applications. While offering Rapid-Prototyping and automatic alignment, it gives us the additional feature to integrate individual labels on chips: Three things we never want to miss in our research again.